MSG061P03G - P-Channel Enhancement Mode MOSFET
DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G * Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC
MSG061P03G Features
* -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
* HBM ESD protection level pass 8KV.
* 100% UIS+Rg tested.
* Reliable and Rugged.
* Lead free and green device available (RoHS compliant). Note: The diode connected between the g
