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MSG061P03G

P-Channel Enhancement Mode MOSFET

MSG061P03G Features

* -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V

* HBM ESD protection level pass 8KV.

* 100% UIS+Rg tested.

* Reliable and Rugged.

* Lead free and green device available (RoHS compliant). Note: The diode connected between the g

MSG061P03G General Description

DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G
* Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC .

MSG061P03G Datasheet (707.45 KB)

Preview of MSG061P03G PDF

Datasheet Details

Part number:

MSG061P03G

Manufacturer:

CITC

File Size:

707.45 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

MSG061P03G P-Channel Enhancement Mode MOSFET CITC

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