MSG061P03G - P-Channel Enhancement Mode MOSFET

CITC

Datasheet Details

Part number	MSG061P03G
Manufacturer	CITC
File Size	707.45 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	MSG061P03G-CITC.pdf

DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G Absolute Maximum Ratings (TA = 25OC unless otherwise specified)

s.
-30V/-40A RDS(ON) = 6.1mΩ (max. ) @ VGS= -10V RDS(ON) = 11mΩ (max. ) @ VGS= -4.5V.
HBM ESD protection level pass 8KV.
100% UIS+Rg tested.
Reliable and Rugged.
Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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Published: Mar 13, 2018 |