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MSG061P03G P-Channel Enhancement Mode MOSFET

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Description

MSG061P03G P-Channel Enhancement Mode MOSFET * .
DDDD SS SG PIN 1 DFN3. Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER.

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Datasheet Specifications

Part number
MSG061P03G
Manufacturer
CITC
File Size
707.45 KB
Datasheet
MSG061P03G-CITC.pdf
Description
P-Channel Enhancement Mode MOSFET

Features

* -30V/-40A RDS(ON) = 6.1mΩ (max. ) @ VGS= -10V RDS(ON) = 11mΩ (max. ) @ VGS= -4.5V
* HBM ESD protection level pass 8KV.
* 100% UIS+Rg tested.
* Reliable and Rugged.
* Lead free and green device available (RoHS compliant). Note: The diode connected between the g

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