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MSU115N06G

N-Channel Enhancement Mode MOSFET

MSU115N06G Features

* 60V/58A RDS(ON) = 11.5mΩ (max.) @ VGS= 10V RDS(ON) = 14.5mΩ (max.) @ VGS= 4.5V

* Reliable and Rugged.

* Lead free and green device available (RoHS compliant).

* 100% UIS + Rg Tested

* Application

* DC-DC converter.

* Power Load Switching Applicat

MSU115N06G General Description

Top View of TO-251 D G
* Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, s.

MSU115N06G Datasheet (677.12 KB)

Preview of MSU115N06G PDF

Datasheet Details

Part number:

MSU115N06G

Manufacturer:

CITC

File Size:

677.12 KB

Description:

N-channel enhancement mode mosfet.

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MSU115N06G N-Channel Enhancement Mode MOSFET CITC

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