MSU115N06G - N-Channel Enhancement Mode MOSFET

CITC

MSU115N06G Datasheet Preview — Preview of MSU115N06G PDF

Datasheet Details

Part number	MSU115N06G
Manufacturer	CITC
File Size	677.12 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	MSU115N06G-CITC.pdf

MSU115N06G Product details

Description

Top View of TO-251 D G Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:2) L=0.5mH Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC Steady State

Features

s.
60V/58A RDS(ON) = 11.5mΩ (max. ) @ VGS= 10V RDS(ON) = 14.5mΩ (max. ) @ VGS= 4.5V.
Reliable and Rugged.
Lead free and green device available (RoHS compliant).
100% UIS + Rg Tested.

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Published: Mar 13, 2018 |