CRTM045N03L2P
Description
：
CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS
30 V
ID（Silicon limited current）
ID（Package limited current）
52 W
RDS(ON)Typ
3.4 mΩ suitable for use as a load switch and PWM applications. The package form is PDFN5- 6, which accords with the Ro HS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤4.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
- Halogen Free
Applications：
Power switch circuit of adaptor and charger. E-cigarette,Electric Tool
Absolute（Tj= 25℃ unless otherwise specified）
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 PD TJ，Tstg
Drain-to-Source Voltage
Continuous Drain Current TC = 25 °C（Silicon limited） a1
Continuous Drain Current TC = 25 °C（Package limited） a1
Continuous Drain Current TC...
