CRTT019N03L2-G Datasheet | CR Micro

Description ： CRTT019N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ 30 260 90 178.5 1.55 V A A W mΩ be used in load switch and power switch applications. The package form is TO-220, which accords with the Ro HS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤1. 95mΩ) - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen Free Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 25 °C（Package limited） Continuous Drain Current TC = 100 °C（Package limited） Pulsed Drain Current TC...