CRXB08D065G3
Description
This product family is CRM's third generation Si C JBS, with lower VF and offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch Si C line in China fully owned by CR MICRO.
Product Summary
VRRM IF (TC=164℃)
650 V 8A
20 n C
Features
- Low conduction loss due to low VF
- Extremely low switching loss by tiny QC
- Highly rugged due to better surge current
- Industrial standard quality and reliability
Applications
- Solar inverter
- EV charge
- High performance SMPS
- Power factor correction
TO-263
Equivalent circuit
C NC
Package Marking and Ordering Information
Part # CRXB08D065G3
Marking CRXB08D065G3
Package TO-263
Page 1
Silicon Carbide Schottky Diode 650 V, 8 A, 20 n C
Maximum Ratings (at Tc = 25 °C, unless otherwise specified)
Parameter
Symbol
Repetitive Peak Reverse Voltage Surge Peak Reverse...
