CS30N20A8R
CR Micro
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Silicon n-channel power mosfet. CS30N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct
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CS30N20FA9R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS30N20F A9R
General Description:
CS30N20F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the se.
CS30N25A8R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS30N25 A8R
General Description:
CS30N25 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self.
CS30N25FA9R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS30N25F A9R
General Description:
CS30N25F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the se.
CS30N50ANR - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS30N50 ANR
General Description:
VDSS
500
CS30N50 ANR, the silicon N-channel Enhanced ID
30
VDMOSFETs, is ob.
CS30-10N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS30-10N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS30-10P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS30-10P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS30-1200 - SILICON CONTROLLED RECTIFIERS
(SEMIWILL)
PP0640SA C-SP3P0-31250000SC
55A SERIES STANDARD
SILICON CONTROLLED RECTIFIERS
DESCRIPTION
The CS30 Series SCR is suitable to fit modes of control fou.
CS30-12io1 - Thyristor
(IXYS)
Thyristor
Single Thyristor
Part number
CS30-12io1
CS30-12io1
VRRM = 1200 V
I TAV
=
30 A
VT = 1,3 V
21 3
Backside: anode
Features / Advantages.