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CS3N20A23H Datasheet - CR Micro

CS3N20A23H - Silicon N-Channel Power MOSFET

VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 2.5 which reduce the conduction loss, improve switching RDS(ON)Typ 1.2 performance and enhance the avalanche energy.

The transistor can be used in various p

CS3N20A23H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol P

CS3N20A23H-CRMicro.pdf

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Datasheet Details

Part number:

CS3N20A23H

Manufacturer:

CR Micro

File Size:

397.86 KB

Description:

Silicon n-channel power mosfet.

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