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CS3N20A23H

Silicon N-Channel Power MOSFET

CS3N20A23H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS3N20A23H General Description

VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 2.5 which reduce the conduction loss, improve switching RDS(ON)Typ 1.2 performance and enhance the avalanche energy. The transistor can be used in various p.

CS3N20A23H Datasheet (397.86 KB)

Preview of CS3N20A23H PDF

Datasheet Details

Part number:

CS3N20A23H

Manufacturer:

CR Micro

File Size:

397.86 KB

Description:

Silicon n-channel power mosfet.

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CS3N20A23H Silicon N-Channel Power MOSFET CR Micro

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