CS3N20A23H
Description
：
VDSS
CS3N20 A23H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
2.5 which reduce the conduction loss, improve switching
RDS(ON)Typ
1.2 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3n C) l Low Reverse transfer capacitances(Typical:5.5p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode...
