CS3N20A23H Datasheet - CR Micro

CS3N20A23H Silicon N-Channel Power MOSFET

VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 2.5 which reduce the conduction loss, improve switching RDS(ON)Typ 1.2 performance and enhance the avalanche energy. The transistor can be used in various p.

CS3N20A23H Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P

CS3N20A23H-CRMicro.pdf