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CS3N20A23H Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS3N20 A23H General .
VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 2.

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Datasheet Specifications

Part number
CS3N20A23H
Manufacturer
CR Micro
File Size
397.86 KB
Datasheet
CS3N20A23H-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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