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CS60N20ANR - Silicon N-Channel Power MOSFET

CS60N20ANR Description

Silicon N-Channel Power MOSFET ○R CS60N20 ANR General .
CS60N20 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS60N20ANR Features

* Fast Switching
* Low ON Resistance(Rdson≤46mΩ)
* Low Gate Charge (Typical Data: 56.9nC)
* Low Reverse transfer capacitances(Typical:46pF)

CS60N20ANR Applications

* Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou

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Datasheet Details

Part number
CS60N20ANR
Manufacturer
CR Micro
File Size
672.84 KB
Datasheet
CS60N20ANR-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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