CS60N20ANR
Description
：
CS60N20 ANR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P, which accords with the Ro HS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤46mΩ)
- Low Gate Charge (Typical Data: 56.9n C)
- Low Reverse transfer capacitances(Typical:46p F)
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC...
