CS65N25ANR
Description
：
VDSS
CS65N25 ANR, the silicon N-channel Enhanced ID
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
420 which reduce the conduction loss, improve switching
RDS(ON)Typ
42 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the Ro HS standard..
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤50mΩ)
- Low Gate Charge (Typical Data:90.1n C)
- Low Reverse transfer capacitances(Typical:44 p F)
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
Drain-to-Source Voltage
IDMa1 VGS EAS a2 dv/dt a3
Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse...
