CS65N25ANR Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS65N25 ANR General .
VDSS 250 CS65N25 ANR, the silicon N-channel Enhanced ID 65 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 420 which.

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Datasheet Specifications

Part number: CS65N25ANR
Manufacturer: CR Micro
File Size: 570.93 KB
Datasheet: CS65N25ANR-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤50mΩ)
* Low Gate Charge (Typical Data:90.1nC)
* Low Reverse transfer capacitances(Typical:44 pF)

Applications

* Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS Drain-to-Source Voltage 250 ID IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Ga

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CS65N25ANR Silicon N-Channel Power MOSFET CR Micro

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