CS70N30ANR - Silicon N-Channel Power MOSFET
CS70N30 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
CS70N30ANR Features
* Fast Switching
* Low ON Resistance(Rdson≤42mΩ)
* Low Gate Charge (Typical Data: 136.2nC)
* Low Reverse transfer capacitances(Typical: 107pF)
* 100% Single Pulse avalanche energy Test 300 V 70 A 250 W 36 mΩ Applications： Power switch circuit of electron ballast and ad
