CS70N30ANR
Description
：
CS70N30 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the Ro HS standard..
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤42mΩ)
- Low Gate Charge (Typical Data: 136.2n C)
- Low Reverse transfer capacitances(Typical: 107p F)
- 100% Single Pulse avalanche energy Test
36 mΩ
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
Drain-to-Source Voltage
IDMa1 VGS EAS a2 dv/dt a3
Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...
