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HGB028N04A

Silicon N-Channel Power MOSFET

HGB028N04A Features

* l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 40 V 150 A 90 A 96 W 2.2 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Par

HGB028N04A General Description

HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for .

HGB028N04A Datasheet (395.32 KB)

Preview of HGB028N04A PDF

Datasheet Details

Part number:

HGB028N04A

Manufacturer:

CR Micro

File Size:

395.32 KB

Description:

Silicon n-channel power mosfet.

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HGB028N04A Silicon N-Channel Power MOSFET CR Micro

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