HGB028N04A Datasheet - CR Micro

HGB028N04A Silicon N-Channel Power MOSFET

HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for .

HGB028N04A Features

* l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 40 V 150 A 90 A 96 W 2.2 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Par

HGB028N04A-CRMicro.pdf