Part number:
HGB028N04A
Manufacturer:
CR Micro
File Size:
395.32 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for
HGB028N04A Features
* l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 40 V 150 A 90 A 96 W 2.2 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Par
Datasheet Details
HGB028N04A
CR Micro
395.32 KB
Silicon n-channel power mosfet.
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