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CT3A01-R3 N-Channel MOSFET

CT3A01-R3 Description

CT3A01-R3 N-Channel Enhancement MOSFET .
The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

CT3A01-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance
* RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A ℃
* Continuous Drain Current at TA=25 ID = 3.2A
* Advanced high cell density

CT3A01-R3 Applications

* Applications
* Power Management
* Portable Equipment
* Load switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT3A01-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC S

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Datasheet Details

Part number
CT3A01-R3
Manufacturer
CT Micro
File Size
764.08 KB
Datasheet
CT3A01-R3-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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