Description
CT3A01-R3 N-Channel Enhancement MOSFET .
The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.
Features
* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance
* RDS(ON) 55mΩ, at VGS= 4.5V, ID=3.2A RDS(ON) 65mΩ, at VGS= 2.5V, ID= 2.5A RDS(ON) 80mΩ, at VGS= 1.8V, ID= 2.0A
℃
* Continuous Drain Current at TA=25 ID = 3.2A
* Advanced high cell density
Applications
* Applications
* Power Management
* Portable Equipment
* Load switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 4 Jun, 2015
CT3A01-R3 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
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