* VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MTN9973J3 Outline TO-252 G：Gate
MTN9973J3 Datasheet (320.82 KB)
MTN9973J3
CYStech Electronics
320.82 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7
N-Channel Enhancement Mode Power MOSF.
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