* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A
MTB010A03H8 Datasheet (852.44 KB)
MTB010A03H8
CYStech
852.44 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Pow.
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