MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTB010A03H8
Manufacturer	CYStech
File Size	852.44 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB010A03H8-CYStech.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A 30V 36A 23A 8.8A 7.0A 7.3mΩ(typ) 9.6mΩ(typ) Equivalent Circuit MTB010A03H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A03H8-0-T6-G Package DFN 5 ×6 (P.

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Published: Mar 11, 2020 |