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MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET

MTB010A03H8 Description

CYStech Electronics Corp.Spec.No.: C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No.: 1/ 10 Dual N-Channel Enhancement Mode Pow.

MTB010A03H8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A

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Datasheet Details

Part number
MTB010A03H8
Manufacturer
CYStech
File Size
852.44 KB
Datasheet
MTB010A03H8-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB010A03H8-like datasheet