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MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 38A 24A 14.2A 11.4A 12.4mΩ(typ) 32.0mΩ(typ) Equivalent Circuit MTB010A06RH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A06RH8-0-T6-G Package DFN.

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Datasheet Details

Part number MTB010A06RH8
Manufacturer CYStech
File Size 858.28 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB010A06RH8 Datasheet
Additional preview pages of the MTB010A06RH8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2020.01.17 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB010A06RH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 38A 24A 14.2A 11.4A 12.4mΩ(typ) 32.
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