MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Part number	MTB010A06RH8
Manufacturer	CYStech
File Size	858.28 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB010A06RH8 Datasheet
Additional preview pages of the MTB010A06RH8 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 38A 24A 14.2A 11.4A 12.4mΩ(typ) 32.0mΩ(typ) Equivalent Circuit MTB010A06RH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A06RH8-0-T6-G Package DFN.

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Published: Mar 11, 2020 |