MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C016H8 Issued Date : 2020.01.17 Revised Date : Page No.: 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET .

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Datasheet Specifications

Part number: MTB010A06RH8
Manufacturer: CYStech
File Size: 858.28 KB
Datasheet: MTB010A06RH8-CYStech.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20

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MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET CYStech

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