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MTB010A06RH8 Datasheet - CYStech

MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET

MTB010A06RH8 Features

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20

MTB010A06RH8 Datasheet (858.28 KB)

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Datasheet Details

Part number:

MTB010A06RH8

Manufacturer:

CYStech

File Size:

858.28 KB

Description:

Dual n-channel enhancement mode power mosfet.

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TAGS

MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET CYStech

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