* BVDSS=660V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package Applications
* Ballast
* Inverter Symbol MTN12N60E3 Outline TO-220 G：Gate D：
MTN12N60E3 Datasheet (266.32 KB)
MTN12N60E3
CYStech
266.32 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C743E3 Issued Date : 2009.10.08 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN12N60.
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