MTN12N60E3 - N-Channel Enhancement Mode Power MOSFET
MTN12N60E3 Features
* BVDSS=660V typically @ Tj=150℃
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package Applications
* Ballast
* Inverter Symbol MTN12N60E3 Outline TO-220 G：Gate D：
