* VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Excellent thermal and electrical capabilities
* Compact and low profile SOT-23 package Equi
MTN2302N3 Datasheet (208.40 KB)
MTN2302N3
CYStech
208.40 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302N3
Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page .
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