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MTN2302N3 - N-Channel Enhancement Mode MOSFET

CYStech

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Datasheet Details

Part number	MTN2302N3
Manufacturer	CYStech
File Size	208.40 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	MTN2302N3-CYStech.pdf

MTN2302N3 Product details

Features

VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A.
Advanced trench process technology.
High density cell design for ultra low on resistance.
Excellent thermal and electrical capabilities.
Compact and low profile SOT-23 package Equivalent Circuit MTN2302N3 Outline SOT-23 D G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Curre.

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Published: Jun 18, 2016 |