* Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A
* High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)
* High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA
* Pb-free lead plating and halogen-free package Symbol T
TIP31CJ3 Datasheet (274.13 KB)
TIP31CJ3
CYStech
274.13 KB
3a npn epitaxial planar power transistor.
CYStech Electronics Corp.
3A NPN Epitaxial Planar Power Transistor
TIP31CJ3
Spec. No. : C609J3
Issued Date : 2014.06.06
Revised Date : Page No. : 1/6.
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