TIP31CJ3 Datasheet - CYStech

TIP31CJ3 3A NPN Epitaxial Planar Power Transistor

TIP31CJ3 Features

* Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A

* High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)

* High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

* Pb-free lead plating and halogen-free package Symbol T

Datasheet Details

TIP31CJ3

CYStech

274.13 KB

3a npn epitaxial planar power transistor.

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