Datasheet4U Logo Datasheet4U.com

NE5531079A Datasheet - California Eastern Labs

NE5531079A SILICON POWER MOS FET

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% po.

NE5531079A Features

* High output power

* High linear gain

* Surface mount package

* Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS

NE5531079A-CaliforniaEasternLabs.pdf

Preview of NE5531079A PDF
NE5531079A Datasheet Preview Page 2 NE5531079A Datasheet Preview Page 3

Datasheet Details

Part number:

NE5531079A

Manufacturer:

California Eastern Labs

File Size:

382.84 KB

Description:

Silicon power mos fet.

📁 Related Datasheet

NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET (Renesas)

NE5532 Internally-compensated dual low noise operational amplifier (Philips)

NE5532 Dual Operational Amplifier (Fairchild Semiconductor)

NE5532 Internally Compensated Dual Low Noise Operational Amplifier (ON Semiconductor)

NE5532 Dual Low-Noise Operational Amplifiers (Texas Instruments)

NE5532A Internally-compensated dual low noise operational amplifier (Philips)

NE5532A Dual Low-Noise Operational Amplifiers (Texas Instruments)

NE5532A Internally Compensated Dual Low Noise Operational Amplifier (ON Semiconductor)

TAGS

NE5531079A NE5531079A SILICON POWER MOS FET California Eastern Labs

NE5531079A Distributor