Part number:
NE5531079A
Manufacturer:
California Eastern Labs
File Size:
382.84 KB
Description:
Silicon power mos fet.
NE5531079A-CaliforniaEasternLabs.pdf
Datasheet Details
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.
Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.
This device can deliver 40.0 dBm output power with 68% po
NE5531079A Features
* High output power
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7 5.7 1.1 mm MAX. : VDS
NE5531079A-CaliforniaEasternLabs.pdf
Datasheet Details
NE5531079A
California Eastern Labs
382.84 KB
Silicon power mos fet.
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