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NE5531079A - SILICON POWER MOS FET

NE5531079A Description

SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

NE5531079A Features

* High output power
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS

NE5531079A Applications

* 460 MHz band radio systems
* 900 MHz band radio systems ORDERING INFORMATION Part Number NE5531079A Order Number NE5531079A-A Package 79A (Pb-Free) Marking W5 Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape NE5531079A-T1

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SILICON POWER MOS FET California Eastern Labs
California Eastern Labs NE5531079A-like datasheet