NE5531079A Datasheet - California Eastern Labs

NE5531079A SILICON POWER MOS FET

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% po.

NE5531079A Features

* High output power

* High linear gain

* Surface mount package

* Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS

NE5531079A Datasheet (382.84 KB)