NR6300EZ 30um InGaAs AVALANCHE PHOTO DIODE

California Eastern Labs

Description

PHOTO DIODE NR6300EZ  30  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS .
The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. Small dark current. Small terminal capa.

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Datasheet Specifications

Part number: NR6300EZ
Manufacturer: California Eastern Labs
File Size: 246.56 KB
Datasheet: NR6300EZ-CaliforniaEasternLabs.pdf
Description: 30um InGaAs AVALANCHE PHOTO DIODE

Features

* Small dark current
* Small terminal capacitance
* High sensitivity
* High speed response
* Detecting area size ID = 5 nA Ct = 0.35 pF @ 0.9 V(BR)R S = 0.94 A/W @
* = 1 310 nm, M = 1 fC = 2.5 GHz MIN. @
* = 1 310 nm, M = 10  30 m Document No. PL10

NR6300EZ Distributors

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NR6300EZ 30um InGaAs AVALANCHE PHOTO DIODE California Eastern Labs

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