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NE33200

SUPER LOW NOISE HJ FET

NE33200 Features

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 18 15 12 9 6 NF 0.5 0 1 10 30 3 0

* HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz

* GATE LENGTH: 0.3 µm

NE33200 General Description

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial appl.

NE33200 Datasheet (87.71 KB)

Preview of NE33200 PDF

Datasheet Details

Part number:

NE33200

Manufacturer:

California Eastern

File Size:

87.71 KB

Description:

Super low noise hj fet.

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TAGS

NE33200 SUPER LOW NOISE FET California Eastern

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