Datasheet4U Logo Datasheet4U.com

NE33200 - SUPER LOW NOISE HJ FET

NE33200 Description

SUPER LOW NOISE HJ FET NE33200 .
The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron g.

NE33200 Features

* VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 18 15 12 9 6 NF 0.5 0 1 10 30 3 0
* HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
* GATE LENGTH: 0.3 µm

NE33200 Applications

* NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associat

📥 Download Datasheet

Preview of NE33200 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE33200
Manufacturer
California Eastern
File Size
87.71 KB
Datasheet
NE33200-CaliforniaEastern.pdf
Description
SUPER LOW NOISE HJ FET

📁 Related Datasheet

  • NE33284 - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE33284A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE33284A-SL - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE33284A-T1 - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE33284A-T1A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE334S01 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE334S01-T1 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
  • NE334S01-T1B - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

📌 All Tags

SUPER LOW NOISE FET California Eastern
California Eastern NE33200-like datasheet