NE33200 - SUPER LOW NOISE HJ FET

Product Overview

California Eastern

Datasheet Details

Part number	NE33200
Manufacturer	California Eastern
File Size	87.71 KB
Description	SUPER LOW NOISE HJ FET
Datasheet	NE33200 Datasheet
Additional preview pages of the NE33200 datasheet.

Product details

Description

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility.

Features

VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE &.

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Published: Aug 9, 2014 |