2N3714 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3713 2N3715 2N3714 2N3716 -65 to +200 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=Rated VCBO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=7.0V BVCEO IC=200m A (2N3713, 2N3715) BVCEO IC=200m A (2N3714, 2N3716) VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(ON)...