2N4232A Datasheet, Transistors, Central Semiconductor

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2N4232A

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📄 Datasheet

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Silicon transistors. The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial

2N4232A Application

• Applications MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volta

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2N4232A

Central Semiconductor

📁 Related Datasheet

2N4232 - Bipolar NPN Device (Seme LAB)
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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.

2N4232A - Bipolar NPN Device (Seme LAB)
2N4232A Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Her.

2N4231 - Bipolar NPN Device (Seme LAB)
2N4231 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetica.

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2N4231 thru 2N4.233 (SILICON) Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. CASE 80 (TO-.

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2N4233 - Bipolar NPN Device (Seme LAB)
2N4233 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.

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