CEDM7001 Datasheet - Central Semiconductor

N-Channel MOSFET

CEDM7001 Features

* 100mW Power Dissipation

* 0.4mm low package profile

* Low rDS(ON)

* Low threshold voltage

* Logic level compatible

* Small leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (

CEDM7001 General Description

The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low theshold voltage. MARKING CODE: H COMPLEMENTARY P-CHANNEL: CEDM800.

CEDM7001 Datasheet (829.14 KB)