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CMNDM8001 Datasheet - Central Semiconductor

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMNDM8001 Features

* Low 0.5mm Package Profile

* Low rDS(ON)

* Low Threshold Voltage

* Logic Level Compatible

* Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 UNITS V V mA mA mW °C APPLICATIONS:

CMNDM8001 General Description

The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: BC SOT-953 CASE * Device is Hal.

CMNDM8001 Datasheet (446.54 KB)

Preview of CMNDM8001 PDF

Datasheet Details

Part number:

CMNDM8001

Manufacturer:

Central Semiconductor ↗

File Size:

446.54 KB

Description:

Surface mount p-channel enhancement-mode silicon mosfet.

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CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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