CMNDM8001 - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

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Datasheet Details

Part number	CMNDM8001
Manufacturer	Central Semiconductor
File Size	446.54 KB
Description	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CMNDM8001_CentralSemiconductor.pdf

CMNDM8001 Product details

Description

The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Device is Halogen Free by design

Features

Low 0.5mm Package Profile.
Low rDS(ON).
Low Threshold Voltage.
Logic Level Compatible.
Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 UNITS V V mA mA mW °C.

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Published: Mar 29, 2011 |