CMUDM8001 Datasheet - Central Semiconductor

CMUDM8001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C8A SOT-523 CASE APPLIC.

CMUDM8001 Features

* Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 E

CMUDM8001_CentralSemiconductor.pdf

CMUDM8001 Datasheet Preview — Preview of CMUDM8001 PDF

Datasheet Details

Part number:

CMUDM8001

Manufacturer:

Central Semiconductor ↗

File Size:

364.29 KB

Description:

Surface mount n-channel enhancement-mode silicon mosfet.

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CMUDM8001 CMUDM8001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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