CMUDM8001 Datasheet (Central Semiconductor) - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8001, SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(on) and Low Theshold Voltage.

MARKING CODE: C8A SOT-523 CASE APPLIC

CMUDM8001 Features

* Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 E