Part number:
CMUDM8001
Manufacturer:
File Size:
364.29 KB
Description:
Surface mount n-channel enhancement-mode silicon mosfet.
CMUDM8001_CentralSemiconductor.pdf
Datasheet Details
Part number:
CMUDM8001
Manufacturer:
File Size:
364.29 KB
Description:
Surface mount n-channel enhancement-mode silicon mosfet.
CMUDM8001, SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
This MOSFET offers Low rDS(on) and Low Theshold Voltage.
MARKING CODE: C8A SOT-523 CASE APPLIC
CMUDM8001 Features
* Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 E
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