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CMUDM8001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMUDM8001 Description

CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed fo.

CMUDM8001 Features

* Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 E

CMUDM8001 Applications

* This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C8A SOT-523 CASE APPLICATIONS:
* Load/Power Switches
* Power Supply Converter Circuits
* Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous

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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor
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