CZDM1003N Datasheet - Central Semiconductor

SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CZDM1003N Features

* Low rDS(ON)

* High current

* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

CZDM1003N General Description

The CENTRAL SEMICONDUCTOR CZDM1003N is a 3.0 Amp, 100 Volt silicon N-Channel enhancementmode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge. SOT-223 CASE MARKING: FULL PART NUMBER APPLICATIONS: * Motor c.

CZDM1003N Datasheet (453.96 KB)