MPQ2906
DESCRIPTION
: The CENTRAL SEMICONDUCTOR MPQ2906, MPQ2907 types are prised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for small signal, general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg
60 40 5.0 600 650 2.0 -65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=30V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10m A
BVEBO
IE=10μA
VCE(SAT) IC=150m A, IB=15m A
VCE(SAT) IC=300m A, IB=30m A
VBE(SAT) IC=150m A, IB=15m A
VBE(SAT) IC=300m A, IB=30m A f T
VCE=20V, IC=50m A, f=100MHz
Cob VCB=10V, IE=0, f=1.0MHz
Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, IC=150m A, IB1=15m...
