CMT10N10 Datasheet (Champion) - POWER FIELD EFFECT TRANSISTOR

CMT10N10, POWER FIELD EFFECT TRANSISTOR

This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor contro

CMT10N10 Features

* ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220 SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-C