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CMT10N10

POWER FIELD EFFECT TRANSISTOR

CMT10N10 Features

* ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220 SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-C

CMT10N10 General Description

This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor contro.

CMT10N10 Datasheet (179.60 KB)

Preview of CMT10N10 PDF

Datasheet Details

Part number:

CMT10N10

Manufacturer:

Champion

File Size:

179.60 KB

Description:

Power field effect transistor.

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CMT10N10 POWER FIELD EFFECT TRANSISTOR Champion

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