CMT10N10 Datasheet, Transistor, Champion

CMT10N10 Features

  • Transistor ! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specif

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Part number:

CMT10N10

Manufacturer:

Champion

File Size:

179.60kb

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📄 Datasheet

Description:

Power field effect transistor. This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also of

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CMT10N10 Application

  • Applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed

TAGS

CMT10N10
POWER
FIELD
EFFECT
TRANSISTOR
Champion

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