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CEB1012, CEB1012_Chino Datasheet - Chino-Excel Technology

CEB1012 N-Channel Enhancement Mode Field Transistor

CEB1012 Features

* 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unl

CEB1012_Chino-ExcelTechnology.pdf

This datasheet PDF includes multiple part numbers: CEB1012, CEB1012_Chino. Please refer to the document for exact specifications by model.
CEB1012 Datasheet Preview Page 2 CEB1012 Datasheet Preview Page 3

Datasheet Details

Part number:

CEB1012, CEB1012_Chino

Manufacturer:

Chino-Excel Technology

File Size:

364.35 KB

Description:

N-channel enhancement mode field transistor.

Note:

This datasheet PDF includes multiple part numbers: CEB1012, CEB1012_Chino.
Please refer to the document for exact specifications by model.

CEB1012 Distributor

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TAGS

CEB1012 CEB1012_Chino N-Channel Enhancement Mode Field Transistor Chino-Excel Technology