CEM8410 Features
* 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot
CEM8410_Chino-ExcelTechnology.pdf
Datasheet Details
CEM8410, CEM8410_Chino
Chino-Excel Technology
59.47 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEM8410, CEM8410_Chino.
Please refer to the document for exact specifications by model.
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