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CEM8958

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CEM8958 Features

* 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2

CEM8958 Datasheet (192.16 KB)

Preview of CEM8958 PDF

Datasheet Details

Part number:

CEM8958

Manufacturer:

Chino-Excel Technology

File Size:

192.16 KB

Description:

Dual enhancement mode field effect transistor(n and p channel).

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TAGS

CEM8958 Dual Enhancement Mode Field Effect TransistorN and Channel Chino-Excel Technology

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