HYG013N03LS1C2 Datasheet, Mosfet, ChipSourceTek

PDF File Details

Part number:

HYG013N03LS1C2

Manufacturer:

ChipSourceTek

File Size:

1.22MB

Download:

📄 Datasheet

Description:

Single n-channel enhancement mode mosfet. Pin Description 30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V DDDD DDDD RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V 100%

Datasheet Preview: HYG013N03LS1C2 📥 Download PDF (1.22MB)
Page 2 of HYG013N03LS1C2 Page 3 of HYG013N03LS1C2

HYG013N03LS1C2 Application

  • Applications rc
  • Switching Application
  • Power Management for DC/DC u
  • Battery Protection Single N-Channel MOSFET o Or

TAGS

HYG013N03LS1C2
Single
N-Channel
Enhancement
Mode
MOSFET
ChipSourceTek

📁 Related Datasheet

HYG013N03LS1C2 - Single N-Channel MOSFET (HUAYI)
HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =.

HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS.

HYG015N03LS1C2 - Single N-Channel Enhancement Mode MOSFET (ChipSourceTek)
Single N-Channel Enhancement Mode MOSFET HYG015N03LS1C2 Feature HYG015N03LS1C2 Pin Description  30V/130A DDDD DDDD RDS(ON)= 1.4mΩ (typ.) @ VGS .

HYG006N04LS1B6 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100% .

HYG022N03LQ1D - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG022N03LQ1U - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG023N03LR1C2 - N-Channel MOSFET (HUAYI)
HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.

HYG023N03LR1D - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

HYG023N03LR1U - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts