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PN4HN60-DBI-T1, PN4HN60 N-Channel Superjunction MOSFET

PN4HN60-DBI-T1 Description

PN4HN60 N-Channel Superjunction MOSFET 600V, 4.5A, 0.95Ω Chipown NeoFET® General .
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

PN4HN60-DBI-T1 Features

* RDS(on) = 0.85Ω ( Typ. )@ VGS = 10V, ID = 2.8A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 15nC)
* Low effective output capacitance
* 100% avalanche tested

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PN4HN60-DBI-T1, PN4HN60. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PN4HN60-DBI-T1, PN4HN60
Manufacturer
Chipown
File Size
356.73 KB
Datasheet
PN4HN60-Chipown.pdf
Description
N-Channel Superjunction MOSFET
Note
This datasheet PDF includes multiple part numbers: PN4HN60-DBI-T1, PN4HN60.
Please refer to the document for exact specifications by model.

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N-Channel Superjunction MOSFET Chipown
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