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PN4HN60-DBI-T1

N-Channel Superjunction MOSFET

PN4HN60-DBI-T1 Features

* RDS(on) = 0.85Ω ( Typ.)@ VGS = 10V, ID = 2.8A

* Extremely high dv/dt capablity

* Very high commutation ruggedness

* Extremely low losses due to very low Rdson

* Qg

* Ultra low gate charge ( Typ. Qg = 15nC)

* Low effective output capacitance

* 100% avalanche tested

PN4HN60-DBI-T1 General Description

The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the .

PN4HN60-DBI-T1 Datasheet (356.73 KB)

Preview of PN4HN60-DBI-T1 PDF

Datasheet Details

Part number:

PN4HN60-DBI-T1

Manufacturer:

Chipown

File Size:

356.73 KB

Description:

N-channel superjunction mosfet.

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PN4HN60-DBI-T1 N-Channel Superjunction MOSFET Chipown

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