CMU5N50 - N-Channel Transistor

Cmos

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Datasheet Details

Part number	CMU5N50
Manufacturer	Cmos
File Size	1.37 MB
Description	N-Channel Transistor
Datasheet	CMU5N50-Cmos.pdf

CMU5N50 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

TO252 / TO251 Pin Configuration Low gate charge (typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100%avalanche tested Improved dv/dt capability D G S TO252 G D S TO251 (CMD5N50) (CMU5N50) Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avala.

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Published: Mar 9, 2015 |