1N4150-1
- 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
- 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231
- SWITCHING DIODES
- HERMETICALLY SEALED
- METALLURGICALLY BONDED
- DOUBLE PLUG CONSTRUCTION
1N4150 and 1N4150-1 and 1N3600
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 m A @ TA = +25°C Derating: 2.0 m A dc/°C Above TL = + 75°C @ L = 3/8” Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
Type V BR V RWM I R1 VR = 50 V dc IR = 10 µA V dc 1N3600 1N4150,-1 75 75 V (pk) 50 50 TA = 25°C µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C µA dc 100 100 C VR = 0; f = 1 Mhz; ac signals = 50 m V (p-p) p F 2.5 2.5 trr IF = IR = 10 to 100 m Adc RL = 100 ohms ns 4 4
FIGURE 1
FORWARD VOLTAGE LIMITS
- ALL TYPES
V F1 Limits I F = 1 m A dc V F2 I F = 10 m A dc V F3 I F = 50 m A dc (Pulsed) V dc 0.760 0.860 V F4 I F = 100 m A dc (Pulsed) V dc 0.820...
