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TIC108E - SILICON CONTROLLED RECTIFIERS

This page provides the datasheet information for the TIC108E, a member of the TIC108 SILICON CONTROLLED RECTIFIERS family.

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Datasheet Details

Part number TIC108E
Manufacturer Comset Semiconductors
File Size 250.78 KB
Description SILICON CONTROLLED RECTIFIERS
Datasheet download datasheet TIC108E Datasheet
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Other Datasheets by Comset Semiconductors
  • TIC108 - SILICON CONTROLLED RECTIFIERS
  • TIC108A - SILICON CONTROLLED RECTIFIERS
  • TIC108B - SILICON CONTROLLED RECTIFIERS
  • TIC108C - SILICON CONTROLLED RECTIFIERS
  • TIC108D - SILICON CONTROLLED RECTIFIERS
  • TIC108M - SILICON CONTROLLED RECTIFIERS
  • TIC108N - SILICON CONTROLLED RECTIFIERS
  • TIC108S - SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription

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SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C.
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