Datasheet4U Logo Datasheet4U.com

CMBD99

SILICON EPITAXIAL GENERAL SWITCHING DIODE

CMBD99 General Description

Repetitive Peak Reverse Voltage Continuous Reverse Voltage Non- Repetitive Peak Forward Current t=1us Peak Forward Current Average Forward Current Power Dissipation Ta=25 deg C Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (per diode) DESCRIPTION Reverse Voltage Leakage Current.

CMBD99 Datasheet (213.17 KB)

Preview of CMBD99 PDF

Datasheet Details

Part number:

CMBD99

Manufacturer:

Continental Device India Limited

File Size:

213.17 KB

Description:

Silicon epitaxial general switching diode.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SILICON EPITAXIAL GENERAL SWITCHING D.

📁 Related Datasheet

CMBD914 SURFACE MOUNT ZENER DIODE (Rectron Semiconductor)

CMBD914 SURFACE MOUNT ZENER DIODE (Rectron Semiconductor)

CMBD914 SURFACE MOUNT ZENER DIODE (Rectron Semiconductor)

CMBD914N3 High -Speed switching diode (Cystech Electonics)

CMBD99 SILICON EPITAXIAL GENERAL SWITCHING DIODE (Continental Device India Limited)

CMBD1201 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES (Continental Device India Limited)

CMBD1201 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES (Continental Device India Limited)

CMBD1202 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES (Continental Device India Limited)

CMBD1202 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES (Continental Device India Limited)

CMBD1203 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES (Continental Device India Limited)

TAGS

CMBD99 SILICON EPITAXIAL GENERAL SWITCHING DIODE Continental Device India Limited

Image Gallery

CMBD99 Datasheet Preview Page 2 CMBD99 Datasheet Preview Page 3

CMBD99 Distributor