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CMBT200 - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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CMBT200 Product details

Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.8 Derate Above=25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range Thermal Resistance (Rth j-a) 357 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted) DESCRIPTION SYMBOL TEST CONDITION MIN MAX VCBO IC=10uA, IE=0 60 Collector -Base Voltage VCEO IC=1mA, IB=0 45 Colle

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