CFG40006S Datasheet - Cree

CFG40006S RF Power GaN HEMT

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-le.

CFG40006S Features

* Up to 6 GHz Operation

* 13 dB Small Signal Gain at 2.0 GHz

* 11 dB Small Signal Gain at 6.0 GHz

* 8 W typical at PIN = 32 dBm

* 65 % Efficiency at PIN = 32 dBm

* 28 V Operation

* 3mm x 3mm Package APPLICATIONS

* 2-Way Private

CFG40006S Datasheet (1.65 MB)

CFG40006S Datasheet Preview — Preview of CFG40006S PDF

Datasheet Details

Part number:

CFG40006S

Manufacturer:

Cree

File Size:

1.65 MB

Description:

Rf power gan hemt.

📁 Related Datasheet

CFG455B FILTERS (Murata Electronics)

CFG455C FILTERS (Murata Electronics)

CFG455D FILTERS (Murata Electronics)

CFG455E FILTERS (Murata Electronics)

CFG455E10 FILTERS (Murata Electronics)

CFG455F FILTERS (Murata Electronics)

CFG455G FILTERS (Murata Electronics)

CFG455H FILTERS (Murata Electronics)

TAGS

CFG40006S Power GaN HEMT Cree

CFG40006S Distributor