CFG40006S RF Power GaN HEMT

Cree

Description

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH400.

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Datasheet Specifications

Part number: CFG40006S
Manufacturer: Cree
File Size: 1.65 MB
Datasheet: CFG40006S-Cree.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation

CFG40006S Distributors

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CFG40006S Power GaN HEMT Cree

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