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CFG40006S RF Power GaN HEMT

CFG40006S Description

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH400.

CFG40006S Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65 % Efficiency at PIN = 32 dBm
* 28 V Operation

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Datasheet Details

Part number
CFG40006S
Manufacturer
Cree
File Size
1.65 MB
Datasheet
CFG40006S-Cree.pdf
Description
RF Power GaN HEMT

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Power GaN HEMT Cree
Cree CFG40006S-like datasheet