CGH40010 RF Power GaN HEMT

Cree

CGH40010 Description

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH4.
RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

CGH40010 Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. www. DataSheet4U. com The transistor is available in both screw-down, flange and solderdown, pill packages. Package Type s: 440166, & 440196 PN’s: CGH40

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CGH40010 Datasheet Preview — Preview of CGH40010 PDF

Datasheet Details

Part number: CGH40010
Manufacturer: Cree
File Size: 4.46 MB
Datasheet: CGH40010_Cree.pdf
Description: RF Power GaN HEMT

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Power GaN HEMT Cree

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