• Part: CGH40010
  • Description: RF Power GaN HEMT
  • Manufacturer: Cree
  • Size: 4.46 MB
Download CGH40010 Datasheet PDF
Cree
CGH40010
FEATURES - - - - - - Up to 4 GHz Operation 16 d B Small Signal Gain at 2.0 GHz 14 d B Small Signal Gain at 4.0 GHz 13 W typical P3d B 65 % Efficiency at P3d B 28 V Operation APPLICATIONS - - - - - 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms il 2007 Rev 1.4 - Apr Subject to change without notice. .cree./wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ IGMAX TS RθJC Rating 84 -10, +2 -55, +150 175 4.0 245 5.0 Units Volts Volts ˚C ˚C m A ˚C ˚C/W .. Note: Measured for the CGH40010F at PDISS = 14 W. Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics4 Gate Threshold Voltage Gate Quiescent...