* Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation APPLICATIONS
* 2-Way Private Radio Broadba
CGH40010
Cree
4.46 MB
Rf power gan hemt.
PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
📁 Related Datasheet
CGH40010 - RF Power GaN HEMT
(MACOM)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..
CGH40010 - RF Power GaN HEMT
(Wolfspeed)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor.
CGH40006P - RF Power GaN HEMT
(MACOM)
CGH40006P
6 W, RF Power GaN HEMT
Description
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006P - RF Power GaN HEMT
(Cree)
CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, oper.
CGH40006P - RF Power GaN HEMT
(Wolfspeed)
CGH40006P
6 W, RF Power GaN HEMT
Description
Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
CGH40006S - RF Power GaN HEMT
(MACOM)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T.
CGH40006S - RF Power GaN HEMT
(Cree)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006S - RF Power GaN HEMT
(Wolfspeed)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (.
