CGH40010
Cree
4.46MB
Rf power gan hemt. RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP,
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CGH40010 - RF Power GaN HEMT
(MACOM)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..
CGH40010 - RF Power GaN HEMT
(Wolfspeed)
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Description
Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor.
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6 W, RF Power GaN HEMT
Description
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006P - RF Power GaN HEMT
(Cree)
CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, oper.
CGH40006P - RF Power GaN HEMT
(Wolfspeed)
CGH40006P
6 W, RF Power GaN HEMT
Description
Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
CGH40006S - RF Power GaN HEMT
(MACOM)
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6 W, RF Power GaN HEMT, Plastic
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CGH40006S - RF Power GaN HEMT
(Cree)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
CGH40006S - RF Power GaN HEMT
(Wolfspeed)
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Description
Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (.
CGH40025 - RF Power GaN HEMT
(MACOM)
CGH40025
25 W, RF Power GaN HEMT
Description
The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002.
CGH40025 - RF Power GaN HEMT
(Cree)
CGH40025
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat.