CGHV22100 Datasheet, Hemt, Cree

CGHV22100 Features

• Hemt
• 1.8 - 2.2 GHz Operation
• 20 dB Gain
• -35 dBc ACLR at 25 W PAVE
• 31-35 % Efficiency at 25 W PAVE
• High Degree of DPD Correction Can be

PDF File Details

Part number:

CGHV22100

Manufacturer:

Cree

File Size:

697.13kb

Download:

📄 Datasheet

Description:

Gan hemt. RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CA

CGHV22100 Application

• Applications The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV242410010

TAGS

CGHV22100

Cree

📁 Related Datasheet

CGHV22200 - GaN HEMT (Cree)
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

CGHV27015S - GaN HEMT (Cree)
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) desi.

CGHV27015S - GaN HEMT (Wolfspeed)
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis.

CGHV27030S - GaN HEMT (CREE)
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers .

CGHV27030S - GaN HEMT (MACOM)
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi.

CGHV27060MP - GaN HEMT (Cree)
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron .

CGHV27100 - GaN HEMT (Cree)
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.

CGHV27200 - GaN HEMT (Cree)
PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV14250 - GaN HEMT (Cree)
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV14250 - GaN HEMT (Wolfspeed)
CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.