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CGHV22100

GaN HEMT

CGHV22100 Features

* 1.8 - 2.2 GHz Operation

* 20 dB Gain

* -35 dBc ACLR at 25 W PAVE

* 31-35 % Efficiency at 25 W PAVE

* High Degree of DPD Correction Can be Applied Rev 2.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings

CGHV22100 General Description

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5%, 0603, ATC CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 pF, 5%, 250 V, 0805, A CONN, N, FEM, W.

CGHV22100 Datasheet (697.13 KB)

Preview of CGHV22100 PDF

Datasheet Details

Part number:

CGHV22100

Manufacturer:

Cree

File Size:

697.13 KB

Description:

Gan hemt.
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

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TAGS

CGHV22100 GaN HEMT Cree

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