CGHV22100 Datasheet - Cree

CGHV22100, GaN HEMT

CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
RES, 1/16 W, 0603, 1%, 10.

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CGHV22100-Cree.pdf

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Datasheet Details

Part number:

CGHV22100

Manufacturer:

Cree

File Size:

697.13 KB

Description:

GaN HEMT

Features

* 1.8 - 2.2 GHz Operation
* 20 dB Gain
* -35 dBc ACLR at 25 W PAVE
* 31-35 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Applied Rev 2.0
* May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings

Applications

* The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1 Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Gain @ 44 dBm 18.7 20.7 22.0 ACLR @ 44

CGHV22100 Distributors

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CGHV22100 GaN HEMT Cree

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