Datasheet4U Logo Datasheet4U.com

CGHV22100 Datasheet - Cree

CGHV22100 GaN HEMT

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5%, 0603, ATC CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 pF, 5%, 250 V, 0805, A CONN, N, FEM, W.
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1 Typical Performance Over 1.8 - 2.2.

CGHV22100 Features

* 1.8 - 2.2 GHz Operation

* 20 dB Gain

* -35 dBc ACLR at 25 W PAVE

* 31-35 % Efficiency at 25 W PAVE

* High Degree of DPD Correction Can be Applied Rev 2.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings

CGHV22100 Datasheet (697.13 KB)

Preview of CGHV22100 PDF

Datasheet Details

Part number:

CGHV22100

Manufacturer:

Cree

File Size:

697.13 KB

Description:

Gan hemt.

📁 Related Datasheet

CGHV22200 GaN HEMT (Cree)

CGHV27015S GaN HEMT (Cree)

CGHV27015S GaN HEMT (Wolfspeed)

CGHV27030S GaN HEMT (CREE)

CGHV27030S GaN HEMT (MACOM)

CGHV27060MP GaN HEMT (Cree)

CGHV27100 GaN HEMT (Cree)

CGHV27200 GaN HEMT (Cree)

CGHV14250 GaN HEMT (Cree)

CGHV14250 GaN HEMT (Wolfspeed)

TAGS

CGHV22100 GaN HEMT Cree

Image Gallery

CGHV22100 Datasheet Preview Page 2 CGHV22100 Datasheet Preview Page 3

CGHV22100 Distributor