CGHV22100 Description
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. Measured in the...
CGHV22100 Key Features
- 2.2 GHz Operation
- 20 dB Gain
- 35 dBc ACLR at 25 W PAVE
- 31-35 % Efficiency at 25 W PAVE
- High Degree of DPD Correction Can be Applied
- May 2015