CGHV22100 Datasheet - Cree

CGHV22100 GaN HEMT

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5%, 0603, ATC CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 pF, 5%, 250 V, 0805, A CONN, N, FEM, W.

CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1 Typical Performance Over 1.8 - 2.2.

CGHV22100 Features

* 1.8 - 2.2 GHz Operation

* 20 dB Gain

* -35 dBc ACLR at 25 W PAVE

* 31-35 % Efficiency at 25 W PAVE

* High Degree of DPD Correction Can be Applied Rev 2.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings

CGHV22100-Cree.pdf