6116A - CY6116A

Cypress Semiconductor

Datasheet Details

the memory location specified on the adĆ dress pins (A 0 through A 10).

D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance CMOS static RAMs orgaĆ nized as 2048 words by 8 bits. Easy memoryexpansionisprovidedbyanactive LOW chip enable (CE) and active LOW output enable (OE), and threeĆstate drivĆ ers. The CY6116A and CY611.

📁 6116A Similar Datasheet

6116LA - CMOS Static RAM (Renesas)
6116SA - CMOS Static RAM (Renesas)
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61113-001 - GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (Micropac Industries)
61113-002 - GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (Micropac Industries)
61113-003 - GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (Micropac Industries)
61113-004 - GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (Micropac Industries)
61113-005 - GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (Micropac Industries)

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Published: Dec 20, 2005 |