6116A Datasheet (Cypress Semiconductor)

6116A, CY6116A

the memory location specified on the adĆ dress pins (A 0 through A 10).

ReadingthedeviceisaccomplishedbytakĆ ing chip enable (CE) and output enable (OE) LOW while write enable (WE ) reĆ mains HIGH.Undertheseconditions,the contents of the memory location specified on the address pins will appear on

6116A Features

* D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge The CY6116A and CY6117A are highĆ performance