FM25V05 Datasheet - Cypress Semiconductor

FM25V05 512Kb Serial 3V F-RAM Memory

The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and syste.

FM25V05 Features

* 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for

FM25V05-CypressSemiconductor.pdf