Description
The FM31L276/FM31L278 device integrates F-RAM memory with the most commonly needed functions for processor-based systems.
Features
- 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM).
- Logically organized as 8K × 8 (FM31L276)/ 32K × 8 (FM31L278).
- High-endurance 100 trillion (1014) read/writes.
- 151-year data retention (See Data Retention and Endurance on page 29).
- NoDelay™ writes.
- Advanced high-reliability ferroelectric process.
- High Integration Device Replaces Multiple Parts.
- Serial nonvolatile memory.
- Real time clock (RTC).
- Low voltage reset.
- Watchdog timer.
