TIP31CE3 Datasheet - Cystech Electonics Corp

TIP31CE3 3A NPN Epitaxial Planar Power Transistor

TIP31CE3 is designed for use in general purpose amplifier and switching applications. * Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A * High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) * High current gain-bandwidth product , fT = 3M.

TIP31CE3 Features

* Symbol TIP31CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25

TIP31CE3_CystechElectonicsCorp.pdf