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TIP31CE3

3A NPN Epitaxial Planar Power Transistor

TIP31CE3 Features

* Symbol TIP31CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25

TIP31CE3 General Description

TIP31CE3 is designed for use in general purpose amplifier and switching applications.

* Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A

* High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)

* High current gain-bandwidth product , fT = 3M.

TIP31CE3 Datasheet (172.39 KB)

Preview of TIP31CE3 PDF

Datasheet Details

Part number:

TIP31CE3

Manufacturer:

Cystech Electonics Corp

File Size:

172.39 KB

Description:

3a npn epitaxial planar power transistor.
CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor www.DataSheet4U.com Issued Date : 2003.09.04 Revised Date : Page No. : 1/4 Spec. .

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TIP31CE3 NPN Epitaxial Planar Power Transistor Cystech Electonics Corp

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