TIP31CE3 - 3A NPN Epitaxial Planar Power Transistor

Product Overview

Cystech Electonics Corp

Datasheet Details

Part number	TIP31CE3
Manufacturer	Cystech Electonics Corp
File Size	172.39 KB
Description	3A NPN Epitaxial Planar Power Transistor
Datasheet	TIP31CE3 Datasheet
Additional preview pages of the TIP31CE3 datasheet.

Product details

Description

TIP31CE3 is designed for use in general purpose amplifier and switching applications. Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

Features

Symbol TIP31CE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD.

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Published: Mar 6, 2010 |