B35N04J3 MTB35N04J3

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C453J3 Issued Date : 2009.03.11 Revised Date : Page No.: 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N.

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Datasheet Specifications

Part number: B35N04J3
Manufacturer: Cystech Electonics
File Size: 213.20 KB
Datasheet: B35N04J3-CystechElectonics.pdf
Description: MTB35N04J3

Features

* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB35N04J3 CYStek Product Specification

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B35N04J3 MTB35N04J3 Cystech Electonics

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