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BTN8050SA3 General Purpose NPN Epitaxial Planar Transistor

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Description

CYStech Electronics Corp.www.DataSheet4U.com Spec.No.: C222A3 Issued Date : 2003.10.07 Revised Date : Page No.: 1/4 General Purpose NPN Epitaxia.
The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull operation. High collector current , IC = 700m.

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Datasheet Specifications

Part number
BTN8050SA3
Manufacturer
Cystech Electonics
File Size
175.75 KB
Datasheet
BTN8050SA3_CystechElectonics.pdf
Description
General Purpose NPN Epitaxial Planar Transistor

Features

* Symbol BTN8050SA3 Outline TO-92 B:Base C:Collector E:Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050SA3 CYStek Product Specification

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