* VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A
* Low Gate Charge
* Simple Drive Requirement BVDSS ID RDSON 60V 12A 100mΩ
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package Symbol MEN
MEN9973J3 Datasheet (344.23 KB)
MEN9973J3
Cystech Electonics
344.23 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Pa.
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