* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A
MTB011N10RQ8 Datasheet (428.54 KB)
MTB011N10RQ8
Cystech Electonics
428.54 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB011N10RQ8
Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : .
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